Semiconductor device usable at very high frequencies and its pro

Details Semiconductor device usable at very high frequencies and its pro Semiconductor device usable at very high frequencies and its pro

1981-07-31

1984-03-13

Gensler, Paul L.

Wave transmission lines and networks

Long line elements and components

333 99R, 357 68, H01P 100

Patent

active

044370776

ABSTRACT:
The impedance value of the semiconductor device usable at very high frequencies is preset during manufacture.
The device comprises a Gunn or Zener diode coupled to a coaxial line. The central conductor of the line is constituted by a metal wire mandrel or a metal coating deposited on a glass fibre section.
The outer cylinderical conductor is a cylindrical metal coating deposited on a ring of dielectric material, such as glass and which surrounds the diode.
Application to microstrip, transmitting antenna and radial cavity circuits.

REFERENCES:
patent: 3821614 (1974-06-01), Schmidt
patent: 4151494 (1979-04-01), Nishikawa et al.

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