Semiconductor device, the method of manufacturing the same,...

Details Semiconductor device, the method of manufacturing the same,... Semiconductor device, the method of manufacturing the same,...

2007-01-02

2007-01-02

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C257S341000, C257S342000, C257S370000, C257S378000, C257S474000, C257S477000, C257S526000

Reexamination Certificate

active

10928927

ABSTRACT:
A semiconductor device is disclosed that reduces the reverse leakage current caused by reverse bias voltage application and reduces the on-voltage of the IGBT. A two-way switching device using the semiconductor devices is provided, and a method of manufacturing the semiconductor device is disclosed. The reverse blocking IGBT reduces the reverse leakage current and the on-voltage by bringing portions of an n−-type drift region1that extend between p-type base regions and an emitter electrode into Schottky contact to form Schottky junctions.

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Takei, M., et al., “600V-IGBT With Reverse Blocking Capability,” Proceedings of 2001 International Symposium on Power Semiconductor Devices & ICs, Osaka, vol. 11.1, pp. 413-416, Nagano, Japan.

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