Semiconductor device that prevents peeling of a titanium nitride

Details Semiconductor device that prevents peeling of a titanium nitride Semiconductor device that prevents peeling of a titanium nitride

1996-08-27

1998-06-30

Arroyo, Teresa M.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257751, 257763, 257764, 257767, 257770, 257774, H01L 2348, H01L 2352, H01L 2940

Patent

active

057738904

ABSTRACT:
A titanium film 14 is formed on a whole surface including an inner surface of a hole 10. Then the titanium film 14 outside of the interior of the hole 10 is removed by the chemical mechanical polishing (CMP) method, the resist etchback method or the ECR plasma etching method. Thereafter a titanium nitride film 15 is formed on the whole surface. Consequently, when a tungsten film 16 is formed, using a fluorine containing gas such as WF.sub.6 gas, etc., since there exists no titanium film 14 outside of the hole 10 and only the titanium nitride film 15 resistant to the fluorine containing gas exists there, no peeling-off of the titanium nitride film 15 due to corrosion of the titanium film 14 takes place, and thus it is prevented that it produces a dust source.

REFERENCES:
patent: 5567987 (1996-10-01), Lee
patent: 5572071 (1996-11-01), Lee

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