Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2006-07-06
2008-09-02
Luu, Pho M. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185260, C365S185270, C365S185280
Reexamination Certificate
active
07420840
ABSTRACT:
A semiconductor device comprises an N-type insulated-gate field-effect transistor including a first insulating layer that is provided along side walls of a gate electrode, has a negative thermal expansion coefficient, and applies a tensile stress to a channel region of the N-type insulated-gate field-effect transistor. The device also comprises a P-type insulated-gate field-effect transistor including a second insulating layer that is provided along side walls of a gate electrode, has a positive thermal expansion coefficient, and applies a compression stress to a channel region of the P-type insulated-gate field-effect transistor.
REFERENCES:
patent: 6903978 (2005-06-01), Mirgorodski et al.
patent: 6903979 (2005-06-01), Mirgorodski et al.
patent: 2004-63591 (2004-02-01), None
H. Choosuwan et al. “Negative thermal expansion behavior in single crystal and ceramic of Nb2O5-based compositions”, Journal of Applied Physics, Apr. 15, 2002, vol. 91, No. 8, pp. 5051-5054.
A.W. Sleight “Compounds That Contract on Heating”, Inorg. Chem., 1998, vol. 37, No. 12, pp. 2854-2860.
H.S. Yang et al. “Dual Stress Liner for High Performance sub-45nm Gatelength SOI CMOS Manufacturing”, IEDM, 2004, P1075.
Foley & Lardner LLP
Kabushiki Kaisha Toshiba
Luu Pho M.
LandOfFree
Semiconductor device that is advantageous in operational... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device that is advantageous in operational..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device that is advantageous in operational... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3982149