Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-06-12
2007-06-12
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23021, C257SE23144, C257SE23020, C257SE23187, C257SE25029, C257SE23160, C257SE23151, C257S762000, C257S734000, C257S642000, C257S774000, C257S751000, C257S776000, C257S784000
Reexamination Certificate
active
11142324
ABSTRACT:
A semiconductor device including: a semiconductor section in which an element is formed; an insulating layer formed on the semiconductor section; an electrode pad formed on the insulating layer; a contact section formed of a conductive material provided in a contact hole in the insulating layer and electrically connected with the electrode pad; a passivation film formed to have an opening on a first section of the electrode pad and to be positioned on a second section of the electrode pad; a bump formed to be larger than the opening in the passivation film and to be partially positioned on the passivation film; and a barrier layer which lies between the electrode pad and the bump. The contact section is connected with the second section at a position within a range in which the contact section overlaps the bump while avoiding the first section of the electrode pad.
REFERENCES:
patent: 5202275 (1993-04-01), Sugiura et al.
patent: 6689680 (2004-02-01), Greer
patent: 6727593 (2004-04-01), Toyoda et al.
patent: 2001/0045651 (2001-11-01), Saito et al.
patent: 2002/0000665 (2002-01-01), Barr et al.
patent: 2002/0163083 (2002-11-01), Hatano et al.
patent: 2003/0011072 (2003-01-01), Shinogi et al.
patent: 2003/0230809 (2003-12-01), Nakajima et al.
patent: 2004/0070042 (2004-04-01), Lee et al.
patent: 2004/0094837 (2004-05-01), Greer
patent: 2004/0145031 (2004-07-01), Ito
patent: 2004/0188847 (2004-09-01), Nozawa et al.
patent: 2005/0006688 (2005-01-01), Solo De Zaldivar
patent: 2005/0093150 (2005-05-01), Nakatani
patent: 2005/0202221 (2005-09-01), Wang et al.
patent: 2005/0224984 (2005-10-01), Hortaleza et al.
patent: 2005/0272243 (2005-12-01), Yuzawa et al.
patent: 2006/0131759 (2006-06-01), Hung et al.
patent: A 64-069035 (1989-03-01), None
patent: A 9-283525 (1997-10-01), None
patent: A 2001-176966 (2001-06-01), None
U.S. Appl. No. 11/142,439, filed Jun. 2, 2005, Yuzawa et al.
Takano Michiyoshi
Yuzawa Hideki
Yuzawa Takeshi
Oliff & Berridg,e PLC
Seiko Epson Corporation
Williams Alexander Oscar
LandOfFree
Semiconductor device that improves electrical connection... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device that improves electrical connection..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device that improves electrical connection... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3826747