Semiconductor device that enables simultaneous read and...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185110, C365S185130, C365S185200

Reexamination Certificate

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07126855

ABSTRACT:
A semiconductor device has a memory cell array having the arrangement of a plurality of cores, each of which comprises one block or a set of a plurality of blocks, each block defining a range of memory cells serving as a unit of data erase. The semiconductor device has a bank setting memory circuit configured to select an optional number of cores of the cores as a first bank and to set the remaining cores as a second bank, so as to allow a data read operation to be carried out in one of the first and second banks while a data write or erase operation is carried out in the other of the first and second banks.

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Commonly assigned U.S. Appl. No. 09/478,057, filed Jan. 5, 2000 and 09/523,729, filed Mar. 18, 1999.

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