Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Reexamination Certificate
2006-07-19
2010-12-14
Nguyen, Vinh P (Department: 2829)
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
C324S754090, C324S761010
Reexamination Certificate
active
07852101
ABSTRACT:
The semiconductor device testing apparatus has a testing LSI; a power supply unit; and an intermediate substrate. The testing LSI has a dielectric material layer facing a tested semiconductor device; an electrode disposed in a position corresponding to a position of an external terminal electrode of the tested device on a surface of the dielectric layer facing the tested device; and a first penetrating electrode that passes completely through the dielectric layer, is connected to the electrode, and is used for exchanging signals with the exterior. The power supply unit has mutually independent elastic probe pins that are disposed in positions corresponding to power electrodes of the tested device, and that are provided with a metal protrusion at the distal ends thereof; a substrate on which a first wiring layer is formed and is electrically connected to the probe pins; and a second penetrating electrode that passes through the substrate.
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Hoshino Shigeki
Tanioka Michinobu
Taura Toru
NEC Corporation
Nguyen Vinh P
Sughrue & Mion, PLLC
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