Semiconductor device such as a high electron mobility transistor

Details Semiconductor device such as a high electron mobility transistor Semiconductor device such as a high electron mobility transistor

1991-10-15

1993-10-19

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Having graded composition

257192, 257194, 257287, 257280, H01L 2980

Patent

active

052548635

ABSTRACT:
A semiconductor device is formed by a semiconductor body (1) having a substrate (2) on which is provided a channel-defining region (10) extending between input and output regions (20) and (21). The channel-defining region (10) has a channel layer (11) forming a heterojunction (12) with at least one barrier layer (13) to form within the channel layer (11) a two-dimensional free charge carrier gas (14) of one conductivity type for providing a conduction channel (14) controllable by a gate electrode (25). A potential well region (30) is provided between the substrate (2) and the channel-defining region (10). The potential well region (30) has at least one potential well-defining layer (31) forming heterojunctions (32) with adjacent barrier layers (33) to define a potential well which is empty of free charge carriers of the one conductivity type when no voltage is applied between the input and output regions (20 and 21) and which is sufficiently deep and wide to trap hot charge carriers of the one conductivity type which are emitted from the channel-defining region (10) towards the substrate (1) when a high lateral electrical field exists in the channel-defining region (10), thereby constraining the hot charge carriers near to the gate electrode and enabling an improved output impedance when the device is an FET.

REFERENCES:
patent: 4194935 (1980-03-01), Dingle et al.
patent: 5038187 (1991-08-01), Zhou
patent: 5049951 (1991-09-01), Goronkin et al.
patent: 5099295 (1992-03-01), Ogawa

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