Semiconductor device structures with backside contacts for...

Details Semiconductor device structures with backside contacts for... Semiconductor device structures with backside contacts for...

2006-05-25

2009-11-24

Tsai, H. Jey (Department: 2895)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S336000, C438S337000, C257SE27053

Reexamination Certificate

active

07622357

ABSTRACT:
The present invention relates to a device structure that comprises a substrate with front and back surfaces, and at least one semiconductor device with a first conductive structure located in the substrate and a second conductive structure located thereover. A first conductive contact is located over the front surface of the substrate and laterally offset from the first conductive structure. The first conductive contact is electrically connected to the first conductive structure by a conductive path that extends: (1) from the first conductive structure through the substrate to the back surface, (2) across the back surface, and (3) from the back surface through the substrate to the first conductive contact on the front surface. Further, a second conductive contact is located over the front surface and is electrically connected to the second conductive structure. The conductive path can be formed by lithography and etching followed by metal deposition.

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