Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Patent
1996-09-05
1998-10-27
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
257432, 257435, 257436, 136259, 438 29, H01L 3300, H01L 310232
Patent
active
058280880
ABSTRACT:
The invention relates to a device structure and crystal growth process for making the same, whereby single-crystal semiconductor layers are formed over metal or composite layers. The metal layers function as buried reflectors to enhance the performance of LEDs, solar cells, and photodiodes. The structure may also have application to laser diodes. The structures are made by a modification of a well-established metallic solution growth process. The lateral overgrowth process can be enhanced by imposing an electric current at the growth interface (termed liquid-phase electro-epitaxy). However, the use of an electric current is not crucial. The epitaxial lateral overgrowth technique was also applied to silicon growth on metal-masked silicon substrates.
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AstroPower, Inc.
Saadat Mahshid D.
Wilson Allan R.
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