Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With non-planar semiconductor surface
Reexamination Certificate
2008-05-30
2010-06-15
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With non-planar semiconductor surface
C257S571000, C257SE29033
Reexamination Certificate
active
07737530
ABSTRACT:
Semiconductor device structures for use with bipolar junction transistors and methods of fabricating such semiconductor device structures. The semiconductor device structure includes a semiconductor body having a top surface and sidewalls extending from the top surface to an insulating layer, a first region including a first semiconductor material with a first conductivity type, and a second region including a second semiconductor material with a second conductivity type. The first and second regions each extend across the top surface and the sidewalls of the semiconductor body. The device structure further includes a junction defined between the first and second regions and extending across the top surface and the sidewalls of the semiconductor body.
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Cheng Kangguo
Hsu Louis Lu-Chen
Mandelman Jack Allan
International Business Machines - Corporation
Wilson Allan R.
Wood Herron & Evans LLP
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