Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – On insulating substrate or layer
Reexamination Certificate
2008-05-22
2009-11-17
Wilson, Allan R. (Department: 2815)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
On insulating substrate or layer
C257S571000, C257SE29033
Reexamination Certificate
active
07618872
ABSTRACT:
Semiconductor device structures for use with bipolar junction transistors and methods of fabricating such semiconductor device structures. The semiconductor device structure comprises a semiconductor body having a top surface and sidewalls extending from the top surface to an insulating layer, a first region including a first semiconductor material with a first conductivity type, and a second region including a second semiconductor material with a second conductivity type. The first and second regions each extend across the top surface and the sidewalls of the semiconductor body. The device structure further comprises a junction defined between the first and second regions and extending across the top surface and the sidewalls of the semiconductor body.
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Cheng Kangguo
Hsu Louis Lu-Chen
Mandelman Jack Allan
International Business Machines - Corporation
Wilson Allan R.
Wood Herron & Evans LLP
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