Semiconductor device structured to be less susceptible to power

Details Semiconductor device structured to be less susceptible to power Semiconductor device structured to be less susceptible to power

1996-12-03

1998-08-04

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

257665, 257734, 327540, H01L 2348

Patent

active

057898081

ABSTRACT:
A lead frame of a DRAM chip includes a base end portion to which an external power supply potential ext.cndot.VCC is applied, and two branch portions branching away from the base end portion. A tip portion of one of these two branch portions is connected to an output buffer, and a tip portion of the other is connected to another circuit. Power supply noise generated at the output buffer passes through one of the branch portions to the outside, and will never reach another circuit through the other branch portion. Accordingly, a DRAM which is less susceptible to power supply noise can be provided.

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