Semiconductor device structured to be less susceptible to power

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – Integrated structure

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257691, H01L 2500

Patent

active

059735546

ABSTRACT:
A semiconductor device comprises an MOS transistor, as a capacitive element, formed at the surface of a semiconductor substrate. A first power supply interconnection, above the substrate, applies a first power supply potential to the source and drain of the transistor. A second power supply interconnection, above the first interconnection, applies a second potential to the gate of the transistor. A third power supply interconnection is formed above, in parallel with and connected to the second power supply interconnection. An externally sourced potential is down-converted to be applied appropriately to the first, second and third power supply interconnections. This configuration achieves a semiconductor device that is less susceptible to power supply noise.

REFERENCES:
patent: 4547681 (1985-10-01), Egawa
patent: 5631502 (1997-05-01), Shimada
patent: 5673232 (1997-09-01), Furutani
patent: 5686752 (1997-11-01), Ishimura et al.
patent: 5789808 (1998-08-01), Yamasaki et al.
patent: 5796299 (1998-08-01), Sei et al.

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