Semiconductor device structured to be less susceptible to power

Details Semiconductor device structured to be less susceptible to power Semiconductor device structured to be less susceptible to power

1999-06-16

2000-05-16

Leja, Ronald W.

Electricity: electrical systems and devices

Safety and protection of systems and devices

Transient responsive

327538, H02H 322

Patent

active

060645571

ABSTRACT:
A semiconductor device comprises an MOS transistor, as a capacitive element, formed at the surface of a semiconductor substrate. A first power supply interconnection, above the substrate, applies a first power supply potential to the source and drain of the transistor. A second power supply interconnection, above the first interconnection, applies a second potential to the gate of the transistor. A third power supply interconnection is formed above, in parallel with and connected to the second power supply interconnection. An externally sourced potential is down-converted to be applied appropriately to the first, second and third power supply interconnections. This configuration achieves a semiconductor device that is less susceptible to power supply noise.

REFERENCES:
patent: 5973554 (1999-10-01), Yamasaki et al.

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