Semiconductor device structure which provides individually contr

Details Semiconductor device structure which provides individually contr Semiconductor device structure which provides individually contr

1996-12-20

1998-09-15

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257347, 257372, H01L 2941

Patent

active

058083464

ABSTRACT:
An N-type well region (NW) is provided on a P-type bulk silicon substrate (PS), and a channel region (PC) is provided inside the N-type well region (NW). The channel region is formed of a semiconductor layer having a polarity opposite to that of a source region (ST) and a drain region (DT). A contact hole (CHC) is provided in a gate oxide film (GO) located below a main portion (MP) close to an end portion (EP) of a gate electrode (GT). With this construction, a semiconductor device in which a body terminal is connected to a gate terminal for fast operation can remove restriction on location for connecting the body terminal and the gate terminal to achieve size-reduction and overcome disadvantages due to restriction on supply voltage.

REFERENCES:
patent: 5014109 (1991-05-01), Higuchi
patent: 5498882 (1996-03-01), Houston
patent: 5559368 (1996-09-01), Hu et al.
patent: 5619072 (1997-04-01), Mehta
1994 IEEE, IEDM, pp. 809-812, 1994, Fariborz Assaderaghi, et al., "A Dynamic Threshold Voltage MOSFET (DTMOS) for Ultra-Low Voltage Operation".
1996 IEEE International Solid-State Circuits Conference, pp. 84-85, 1996, Takakuni Douseki, et al., "A 0.5V Simox-MTCMOS Circuit With 200ps Logic Gate".
1995 IEEE International Solid-State Circuits Conference, pp. 88-89, 1996, Tsuneaki Fuse, et al., "0.5V SOI CMOS Pass-Gate Logic".

Affiliated with

Also associated with

Rating

Semiconductor device structure which provides individually contr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device structure which provides individually contr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device structure which provides individually contr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-91341