Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1996-04-19
1998-09-08
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257101, 257103, 372 45, H01L 3300
Patent
active
058048405
ABSTRACT:
A method of fabricating a semiconductor device includes forming a stripe-shaped first insulating film on a semiconductor layer; using the first insulating film as a mask, etching the semiconductor layer to a depth to form a stripe-shaped ridge including a portion of the semiconductor layer left under the first insulating film; using the first insulating film as a mask, growing, by MOCVD, a high-resistance layer, selected from InAlAs and InAsGaAs, contacting both sides of the ridge structure, the high-resistance layer having a shallow donor concentration N.sub.SD, a shallow acceptor concentration N.sub.SA, and a deep donor concentration N.sub.DD in relationships of N.sub.SA >N.sub.SD and N.sub.SA -N.sub.SD <N.sub.DD ; removing the first insulating film; forming a second insulating film covering the high-resistance layer; and forming a surface electrode on the semiconductor layer at the ridge structure.
REFERENCES:
Macrander et al., "Electrical And Structural Characterization Of Highly Perfect Semi-Insulating InAlAs Grown By Molecular Beam Epitaxy", Journal of Crystal Growth, vol. 92, 1988 pp. 83-87.
Ishikawa et al., "Highly Resistive Iron-Doped AlInAs Layers Grown By Metalorganic Chemical Vapor Deposition", Japanese Journal of Applied Physics, vol. 31, 1992, pp. L376-L378.
Willardson, et al.; "Indium Phosphide: Crystal Growth and Characterization"; vol. 31, Academic Press, Inc., 1990, pp. 93-95 & 130-137.
Sasaki, et al.; "Selective MOVPE Growth and Its Application to Semiconductor Photonic Integrated Circuits"; Electronics and Communications in Japan, Part 2, vol. 76, No. 4, 1993, pp. 1-11.
Aoki et al., "High-Speed (10 Gbit/s) and Low-Drive-Voltage (lV Peak to Peak) . . . Buried Hetrostructure", Electronics Letters, Jun. 4, 1992, vol. 28, No. 12.
Ishikawa, Hiroshi; "Semiconductor Laser Light Sources and Receivers for Next Generation Optical Communication Systems"; Fujitsu Scientific and Tech. Jounal, Dec. 1991, vol. 27, pp. 329-337.
Guido et al.; "Carbon-doped A1.sub.x Ga.sub.1 -.sub.x As-GaAs quantum well lasers" Appl. Phys. Lett., Feb. 1998, pp. 522-524.
Gotoda et al.; "Extremely smooth vertical facets . . . beam epitaxy regrowth"; Journal of Crystal Growth, 145 (1994) pp. 675-679.
Okayasu et al.; "Metalorganic vapor phase epitaxial growth for buried heterostructure GaAlAs lasers with semi-insulating blocking layers"; Appl. Phys. Lett. Dec. 14, 1987, pp. 1980-1982.
Zah et al.; "High-Speed . . . Current Blocking Layers"; Electronics Letters, Mar. 1988, vol. 24, No. 11, pp. 695-697.
Lourdudoss et al.; "High-Frequency GaInAsP InP . . . Semi-insulating InP: Fe"; IEEE Photonics Technology Letters, 1993, vol. 5, No. 10 pp. 1119-1122.
Sanada et al.; "Planar-embedded InGaAsP/InP . . . chemical vapor deposition"; Appl. Phys. Lett., Aug., 1987, vol. 51, No. 14, pp. 1054-1056.
Wakao et al.; "InGaAsP/InP Planar Heterostructure Lasers with Semi-Insulating InP Current Blocking Layers Grown by MOCVD"; IEEE Journal of Quantum Electronics, Jun. 1987, vol. QE-23, No. 6, pp. 943-947.
Tanahashi et al.; "Liquid Phase Epitaxial Growth of Fe-Doped Semi-Insulating InP, GaInAsP, and AlGaInAs"; Fujitsu Scientific and Technical Journal, Sep., 1988, pp. 242-253.
Kato Manabu
Ochi Seiji
Mitsubishi Denki & Kabushiki Kaisha
Tran Minh-Loan
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