Semiconductor device structure for insulated gate bipolar transi

Details Semiconductor device structure for insulated gate bipolar transi Semiconductor device structure for insulated gate bipolar transi

1997-05-28

1999-04-13

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257140, 257146, H01L 2974, H01L 31111

Patent

active

058941398

ABSTRACT:
A semiconductor device is provided which includes a first-conductivity-type collector layer having a rear surface on which a collector electrode is formed, a second-conductivity-type buffer layer laminated on the collector layer, a second-conductivity-type conductivity modulation layer formed on the buffer layer, a first-conductivity-type emitter layer formed as a well in a surface of the conductivity modulation layer, a second-conductivity-type source region formed in a surface of a well edge portion of the emitter layer, a gate electrode formed through a gate insulating film to overlap the source region and the conductivity modulation layer, and an emitter electrode that is in ohmic contact with both the emitter layer and the source region. In the present device, the second-conductivity-type source region includes a second-conductivity-type source region formed in the well edge of the emitter layer, and a second-conductivity-type source contact region formed adjacent to the source region and held in ohmic contact with the emitter electrode. This source contact region has a higher impurity concentration than the source region.

REFERENCES:
patent: 5057884 (1991-10-01), Suzuki et al.
patent: 5124772 (1992-06-01), Hideshima et al.
patent: 5247207 (1993-09-01), Wert et al.
patent: 5296725 (1994-03-01), Nandakuman et al.
patent: 5475252 (1995-12-01), Merrill et al.

Affiliated with

Also associated with

Rating

Semiconductor device structure for insulated gate bipolar transi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device structure for insulated gate bipolar transi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device structure for insulated gate bipolar transi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-224232