Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-04-17
2010-06-22
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S050000
Reexamination Certificate
active
07741697
ABSTRACT:
The present invention discloses a semiconductor device, the device comprising a semiconductor layer on a substrate. A gate oxide and a gate electrode are formed on the semiconductor substrate. A gate conductive layer is formed on the gate electrode. A first doped region is formed in the semiconductor layer. A dielectric spacer is optionally formed onto the sidewall of the gate electrode and part of the semiconductor layer. A second doped region is formed from a predetermined distance to the gate electrode, wherein the predetermined distance is no less than the distance between the first doped region and the gate electrode. A third doped region is formed adjacent to the first doped region in the semiconductor layer and between the first doped region and the second doped region.
REFERENCES:
patent: 6936909 (2005-08-01), Marr et al.
patent: 2005/0184315 (2005-08-01), Okayama
patent: 2006/0046354 (2006-03-01), Kreipl
Applied Intellectual Properties Co., Ltd.
Muncy Geissler Olds & Lowe, PLLC
Vu Hung
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