Semiconductor device structure employing a multi-level epitaxial

Details Semiconductor device structure employing a multi-level epitaxial Semiconductor device structure employing a multi-level epitaxial

1992-05-11

1992-10-27

Wojciechowicz, Edward J.

357 41, 357 43, 357 48, 357 49, H01L 2704

Patent

active

051594293

ABSTRACT:
A semiconductor structure including a doped semiconductor substrate defining a surface. A buffer layer of epitaxial semiconductor material overlies the substrate surface, the buffer layer having a relatively higher dopant concentration than the substrate and being virtually free from oxygen precipitation. A layer of intrinsic semiconductor material overlies the buffer layer, and a device layer of epitaxial semiconductor material is situated on the intrinsic layer. The device layer is formed to have a relatively lower dopant concentration than the first layer. Isolation regions extend from a surface of the device layer into the buffer layer for forming an electrically isolated device region in the device layer. At least one active device is formed in the isolated device region.

REFERENCES:
patent: 3547716 (1970-12-01), DeWitt
patent: 3550260 (1970-12-01), Saltich et al.
patent: 3585464 (1971-06-01), Castrucci et al.
patent: 3607465 (1971-09-01), Froulin
patent: 3656028 (1972-04-01), Langdon
patent: 3721588 (1973-03-01), Hays
patent: 3769105 (1973-10-01), Chen et al.
patent: 3772097 (1973-11-01), Davis
patent: 3775196 (1973-11-01), Wakamiya et al.
patent: 3912555 (1975-10-01), Tsuyuki
patent: 3929526 (1975-12-01), Nuttall et al.
patent: 4104086 (1978-08-01), Bondur et al.
patent: 4142925 (1979-03-01), King et al.
patent: 4157269 (1979-06-01), Ning et al.
patent: 4160991 (1979-07-01), Anantha et al.
patent: 4168997 (1979-09-01), Compton
patent: 4191602 (1980-03-01), Baliga
patent: 4252582 (1981-02-01), Anantha et al.
patent: 4307180 (1981-12-01), Pogge
patent: 4319932 (1982-03-01), Jambotkar
patent: 4745081 (1988-05-01), Beyer et al.
patent: 4752817 (1988-06-01), Lechaton et al.
patent: 4926231 (1990-05-01), Hwang et al.
patent: 4936928 (1990-06-01), Shaw et al.
Ang et al., "Growth and Characterization of Germanium and Boron Doped Silicon Epitaxial Films", Journal of Electronic Materials vol. 17, No. 1, 1988, pp. 39-43.

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