Semiconductor device stabilized by an insulating layer formed on

Details Semiconductor device stabilized by an insulating layer formed on Semiconductor device stabilized by an insulating layer formed on

1975-04-11

1977-07-12

Wojciechowicz, Edward J.

357 37, 357 40, 357 43, 357 53, 357 88, 357 89, 357 90, H01L 2972, H01L 2940, H01L 2702, H01L 2900

Patent

active

040358240

ABSTRACT:
A semiconductor device such as a transistor, has a heavily doped emitter, a lightly doped emitter, a base, a collector, an insulating layer covering the lightly doped emitter and a conductive layer extending on the insulating layer covering an L - H junction which is formed by the lightly doped and heavily doped emitters.
The L-H junction and the insulating layer is located at the distance from an emitter-base junction within the diffusion length of minority carriers in the lightly doped emitter.
The above insulating layer is formed before the forming of the heavily doped emitter so that the surface recombination velocity in the emitter is reduced.

REFERENCES:
patent: 3663869 (1972-05-01), Strull

Affiliated with

Also associated with

Rating

Semiconductor device stabilized by an insulating layer formed on does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device stabilized by an insulating layer formed on, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device stabilized by an insulating layer formed on will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-491726