Semiconductor device silicon via fill formed in multiple dielect

Details Semiconductor device silicon via fill formed in multiple dielect Semiconductor device silicon via fill formed in multiple dielect

1992-07-30

1994-03-01

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257741, 257751, 257774, 437189, 437190, 437161, H01L 2934, H01L 2348, H01L 2946, H01L 21225

Patent

active

052910580

ABSTRACT:
A semiconductor device with an electrode wiring structure comprises at least one diffused region provided in a semiconductor substrate, a silicon oxide layer covering the substrate surface, a silicon nitride layer provided on the silicon oxide layer, a through-hole reaching the diffused region through the silicon oxide layer from an upper surface of the silicon nitride layer, a silicon semiconductor layer filled in the through-hole and serving as an electrode wiring layer, and an interconnection layer electrically connected to the diffused region through the silicon semiconductor layer. According to the structure, since the silicon oxide layer is covered with the silicon nitride layer, unwanted contaminations such as phosphorus, boron, etc., previously contained in the silicon oxide layer are not added to the silicon semiconductor layer during its growth process. Therefore, the electrode wiring layer of silicon semiconductor having controlled conductivity can be provided.

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