Semiconductor device manufacturing: process – Semiconductor substrate dicing – By electromagnetic irradiation
Reexamination Certificate
2005-06-07
2005-06-07
Thompson, Craig A. (Department: 2813)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
By electromagnetic irradiation
Reexamination Certificate
active
06902990
ABSTRACT:
A method for separating a semiconductor wafer into several thousand devices or dies by laser ablation. Semiconductor wafers are initially pre-processed to create multiple devices, such as blue LEDs, on the wafers. The wafers are then mounted with tape coated with a generally high level adhesive. The mounted wafer is then placed on a vacuum chuck (which is itself positioned on a computer controlled positioning table) to hold it in place during the cutting process. The cutting surface is then covered with a protective layer to prevent contamination from the effluent resulting from the actual cutting process. A laser beam is generated and passed through optical elements and masks to create a pattern, such as a line or multiple lines. The patterned laser projection is directed at the wafer at a substantially normal angle and applied to the wafer until at least a partial cut is achieved through it. A mechanical separation process completes the separation when only a partial cut is achieved by the patterned laser projection. The dies are then transferred to a grip ring for further processing.
REFERENCES:
patent: 3629545 (1971-12-01), Graham et al.
patent: 3699644 (1972-10-01), Cocca
patent: 3824678 (1974-07-01), Harris et al.
patent: 3970819 (1976-07-01), Gates et al.
patent: 4046985 (1977-09-01), Gates
patent: 4224101 (1980-09-01), Tijburg et al.
patent: 4543464 (1985-09-01), Takeuchi
patent: 4729971 (1988-03-01), Coleman
patent: 4851371 (1989-07-01), Fisher et al.
patent: 4865686 (1989-09-01), Sinohara
patent: 4964212 (1990-10-01), Deroux-Dauphin et al.
patent: 4992393 (1991-02-01), Kosaka et al.
patent: 5075201 (1991-12-01), Koh
patent: 5151389 (1992-09-01), Zappella
patent: 5185295 (1993-02-01), Goto et al.
patent: 5214261 (1993-05-01), Zappella
patent: 5385633 (1995-01-01), Russell et al.
patent: 5543365 (1996-08-01), Wills et al.
patent: 5552345 (1996-09-01), Schrantz et al.
patent: 5631190 (1997-05-01), Negley
patent: 5641416 (1997-06-01), Chadha
patent: 5864171 (1999-01-01), Yamamoto et al.
patent: 5872046 (1999-02-01), Kaeriyama et al.
patent: 5912477 (1999-06-01), Negley
patent: 5922224 (1999-07-01), Broekroelofs
patent: 5932118 (1999-08-01), Yamamoto et al.
patent: 5976691 (1999-11-01), Noguchi et al.
patent: 6117347 (2000-09-01), Ishida
patent: 6140151 (2000-10-01), Akram
patent: 6225194 (2001-05-01), Noguchi et al.
patent: 61219535 (1986-09-01), None
patent: 63174793 (1988-07-01), None
patent: 63183885 (1988-07-01), None
Jeffery P. Sercel, “Increased Production Using Excimer Lasers Through Enhanced Beam Utilization Factors”, SPIE Photonics West Conference, Jan. 26-28, 1998.
Sercel, J.P. (JP Sercel Associates Inc., Hollis, NH, USA) “Increased production using excimer lasers through enhanced beam utilization factors.” Proceedings of the SPIE -The International Society for Optical Engineering (1998) vol. 3274, pp. 183-92.
Published by: SPIE-Int. Soc. Opt. Eng. Price: CCCC 0277-786X/98/$10.00. CODEN: PSISDG ISSN: 0277-786X. SICI: 0277-786X(1998)3274L.183:IPUE;1-G. Conference: Laser Applications in Microelectronic and Optoelectronic Manufacturing III. San Jose, CA USA, Jan. 26-28, 1998.
Brown Michael G.
Eliashevich Ivan
Gottfried Mark
Karlicek, Jr. Robert F.
Nering James E.
Emcore Corporation
Gibbons Del Deo Dolan Griffinger & Vecchione
Thompson Craig A.
LandOfFree
Semiconductor device separation using a patterned laser... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device separation using a patterned laser..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device separation using a patterned laser... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3480336