Semiconductor device, semiconductor substrate and...

Details Semiconductor device, semiconductor substrate and... Semiconductor device, semiconductor substrate and...

2007-11-06

2007-11-06

Fourson, George R. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Miscellaneous

C257S776000, C257SE23143, C438S014000, C438S401000

Reexamination Certificate

active

11350840

ABSTRACT:
A semiconductor device includes a first insulation layer including a first conductor pattern, a second insulation layer formed on the first insulation layer and including a second conductor pattern, and a third conductor pattern formed on the second insulation layer,wherein there is formed a first alignment mark part in the first insulation layer by a part of the first conductor pattern, the third conductor pattern is formed with a second alignment mark part corresponding to the first alignment mark part, the first and second alignment marks forming a mark pair for detecting alignment of the first conductor pattern and the third conductor pattern, the second conductor pattern being formed in the second insulation layer so as to avoid the first alignment mark part.

REFERENCES:
patent: 6617669 (2003-09-01), Saito
patent: 6841451 (2005-01-01), Okayama et al.
patent: 6-29183 (1994-02-01), None
patent: 2000-60702 (2000-09-01), None
patent: 2000-260702 (2000-09-01), None
patent: 2002-89507 (2002-10-01), None
patent: 2002-289507 (2002-10-01), None
Stanley Wolf, Silicon Processing for the VLSI Era vol. 2: Process Integration, 1990 by LAttice PRess, pp. 189-194.

Affiliated with

Also associated with

Rating

Semiconductor device, semiconductor substrate and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, semiconductor substrate and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device, semiconductor substrate and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3880788