Semiconductor device, semiconductor substrate and...

Details Semiconductor device, semiconductor substrate and... Semiconductor device, semiconductor substrate and...

2006-04-25

2006-04-25

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

C438S007000, C438S008000, C438S009000

Reexamination Certificate

active

07033904

ABSTRACT:
A semiconductor device includes a first insulation layer including a first conductor pattern, a second insulation layer formed on the first insulation layer and including a second conductor pattern, and a third conductor pattern formed on the second insulation layer, wherein there is formed a first alignment mark part in the first insulation layer by a part of the first conductor pattern, the third conductor pattern is formed with a second alignment mark part corresponding to the first alignment mark part, the first and second alignment marks forming a mark pair for detecting alignment of the first conductor pattern and the third conductor pattern, the second conductor pattern being formed in the second insulation layer so as to avoid the first alignment mark part.

REFERENCES:
patent: 6841451 (2005-01-01), Okayama et al.
patent: 6-29183 (1994-02-01), None
patent: 2000-260702 (2000-09-01), None
patent: 2002-289507 (2002-10-01), None

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