Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated
Reexamination Certificate
2009-07-30
2010-11-23
Garber, Charles D (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
C257S666000, C257S712000, C257S730000, C257SE23084, C257SE23124
Reexamination Certificate
active
07839004
ABSTRACT:
To provide a semiconductor device and a semiconductor module in which breakage of a semiconductor element due to a pressing force given from the outside is prevented. A semiconductor device according to the present invention has a configuration mainly including an island, a semiconductor element mounted on a front surface of the island, a lead that functions as an external connection terminal, and a sealing resin that covers these components in an integrated manner and mechanically supports them. Further, a through-hole is provided so as to penetrate the sealing resin. A front surface of the sealing resin around the through-hole forms a flat part. The front surface of the sealing resin that overlaps the semiconductor element is depressed inward with respect to the flat part to form a depressed part.
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Garber Charles D
Morrison & Foerster / LLP
Roman Angel
Sanyo Electric Co,. Ltd.
Sanyo Semiconductor Co. Ltd.
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