Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2008-01-01
2008-01-01
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S079000, C257S094000
Reexamination Certificate
active
07315050
ABSTRACT:
A semiconductor device is prepared by the use of a vapor phase method and is provided with a semiconductor layer composed of boron phosphide (BP) having a band gap at room temperature of not less than 2.8 eV and not more than 3.4 eV or a boron phosphide (BP)-base mixed crystal which contains the boron phosphide (BP) and which is represented by the formula: BαAlβGaγIn1−α−β−γPδAsεN1−δ−ε(0<α≦1, 0≦β<1, 0≦γ<1, 0<α+β+γ≦1, 0<δ≦1, 0≦ε<1, 0<δ+ε≦1).
REFERENCES:
patent: 4296424 (1981-10-01), Shibasaki et al.
patent: 5005057 (1991-04-01), Izumiya et al.
patent: 5042043 (1991-08-01), Hatano et al.
patent: 5076860 (1991-12-01), Ohba et al.
patent: 5241553 (1993-08-01), Tanaka
patent: 5536952 (1996-07-01), Shikata
patent: 5624853 (1997-04-01), Shikata
patent: 6069021 (2000-05-01), Terashima et al.
patent: 6541799 (2003-04-01), Udagawa
patent: 6734515 (2004-05-01), Tadatomo et al.
patent: 6809346 (2004-10-01), Udagawa
patent: 2092215 (1993-03-01), None
patent: 689 19 408 (1989-09-01), None
patent: 693 19 360 (1993-03-01), None
patent: 377940 (1990-07-01), None
patent: 562549 (1993-09-01), None
patent: 54-127292 (1979-10-01), None
patent: 2-275682 (1990-11-01), None
patent: 2-288371 (1990-11-01), None
patent: 2-288388 (1990-11-01), None
patent: 3-34549 (1991-02-01), None
patent: 3-34551 (1991-02-01), None
patent: 4-209584 (1992-07-01), None
patent: 5-275440 (1993-10-01), None
patent: 5-275441 (1993-10-01), None
patent: 5-291277 (1993-11-01), None
patent: 5-291278 (1993-11-01), None
patent: 10-247760 (1998-09-01), None
patent: 10-247761 (1998-09-01), None
patent: 11-266006 (1999-09-01), None
patent: 2000-4046 (2000-01-01), None
patent: 2000-58451 (2000-02-01), None
patent: 2000-101129 (2000-04-01), None
patent: 2000-101130 (2000-04-01), None
patent: 2000-235956 (2000-08-01), None
CRC Handbook of Chemistry and physics, David R. Lide, 82nd Edition, Chapter 12, p. 101.
V.A. Fomichev, et al., “Investigation of the energy band structure of boron phosphide by ultra-soft x-ray spectroscopy”, J. Phys. Chem. Solids, Pergamon Press 1968, vol. 29, pp. 1025-1032.
B. Stone, et al., “Semiconducting Properties of Cubic Boron Phosphide”, Physical Review Letters, vol. 4, No. 6, Mar. 15, 1960, pp. 282-284.
R.J. Archer, et al., “Optical absorption, electroluminescence, and the band gap of BP”, Physical Review Letters, vol. 12, No. 19, May 11, 1964, pp. 538-540.
Y. Kumashiro, et al., “Crystal Growth of Thick Wafers of Boron Phosphide”, Journal of Crystal Growth, vol. 70, 1984, pp. 507-514.
T.L. Chu, “Crystals and epitaxial layers of Boron Phosphide”, Journal of Applied Physics, vol. 42, No. 1, Jan. 1971, pp. 420-424.
F.M. Ryan, et al., “Photoluminescence and Pair Spectrum in Boron Phosphide”, Physical Review, vol. 148, No. 2, Aug. 12, 1966, pp. 858-862.
Renata M. Wentzcovitch et al., “Electronic and Structural Properties of BN and BP”, Physical Review B, The American Physical Society, Jul. 15, 1986, pp. 1071-1079, Physical Review B, vol. 34, No. 2.
M. Ferhat et al., “Electronic Structure of BN, BP and BAs”, Physica B, 1998, pp. 229-236, vol. 252.
C.C. Wang, et al., “Preparation, Optical Properties, and Band Structure of Boron Monophosphide”, RCA Review, Jun. 1964, pp. 159-167.
Mitsuharu Takigawa, et al., “Hetero-Epitaxial growth of Boron Monophosphide on Silicon Substrate Using B2H6-PH3-H2system”, Japanese Journal of Applied Physics, vol. 13, No. 3, Mar. 1974, pp. 411-416.
M. Ferhat, et al., “Electronic structure of BN, BP and Bas”, Physica B, vol. 252, No. 3, Jul. 31, 1998, pp. 229-236.
Bachir Bouhafs, et al., “Trends in band-gap pressure coefficients in boron compounds BP, BAs, and BSb”, Journal of Physics: Condensed Matter, vol. 12, No. 26, Jul. 3, 2000, pp. 5655-5668.
A. Zaoui, et al., “Full potential linearized augmented plane wave calculations of structural and electronic properties of BN, BP, BAs and BSb”, Journal of Physics: Condensed Matter, vol. 13, No. 2, Jan. 15, 2001, pp. 253-262.
Y. Kumashiro, et al., “Thermoelectric Properties of Boron and Boron Phosphide CVD Wafers”; 17thInternational Conference on Thermoelectronics (1998); pp. 591-594.
Louie Wai-Sing
Showa Denko K.K.
Sughrue & Mion, PLLC
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