Semiconductor device, semiconductor laser device,...

Details Semiconductor device, semiconductor laser device,... Semiconductor device, semiconductor laser device,...

2008-03-04

2008-03-04

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010, C372S044010, C372S043010

Reexamination Certificate

active

11050289

ABSTRACT:
A semiconductor device has a main structure member laminated on a first conductivity-type semiconductor substrate. On the main structure, there is formed a first substructure member, the entirety of which, including lowermost layer, is second conductivity-type. On the main structure member, there is also formed a second substructure member spatially separated from the first substructure member. The second substructure member has a current block layer of a semiconductor layer on the second conductivity-type structure identical to the first substructure member. In the semiconductor device, there is further provided a p-side electrode formed on the first and second substructure members and between the first and second substructure members to connect therebetween.

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