Semiconductor device, semiconductor laser, and high electron mob

Details Semiconductor device, semiconductor laser, and high electron mob Semiconductor device, semiconductor laser, and high electron mob

1996-04-15

1998-03-31

Healy, Brian

Coherent light generators

Particular active media

Semiconductor

372 43, 372 44, 372 50, 257 15, 257 18, H01S 319, H01L 2906

Patent

active

057346704

ABSTRACT:
A semiconductor device includes a semiconductor substrate having a surface; and a strained superlattice structure including first semiconductor layers having a first strain in a direction with respect to the semiconductor substrate and second semiconductor layers having a second strain in the same direction as and different in magnitude from the first strain, the first semiconductor layers and the second semiconductor layers being alternatingly laminated. The difference in strains between the first semiconductor layers and the second semiconductor layers is reduced, so that the crystalline quality of the strained superlattice structure is improved.

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patent: 5629231 (1997-05-01), Kiehl
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Godefroy et al., "1.55-.mu.m Polarization-Insensitive Optical Amplifier with Strain-Balanced Superlattice Active Layer", IEEE Technology Letters, vol. 7, No. 5, May 1995, pp. 473-475.

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