Semiconductor device resistors having selected temperature coeff

Details Semiconductor device resistors having selected temperature coeff Semiconductor device resistors having selected temperature coeff

1975-11-24

1977-07-12

Albritton, C. L.

Electrical resistors

Resistance value responsive to a condition

Ambient temperature

29612, 357 28, H01C 704

Patent

active

040357570

ABSTRACT:
Two conductors are in resistive contact in spaced apart relation with a body of semiconductor material, e.g., silicon of P type conductivity, which is relatively lightly doped at the areas of contact, the electrical resistance at the areas of contact decreasing with increasing temperature. In one embodiment, portions of the conductors contact spaced apart regions of the body which are relatively highly doped at the areas of contact, parallel paths for current having different resistance characteristics thus being provided through the body between the conductors.

REFERENCES:
patent: 3445301 (1969-05-01), Topas et al.
patent: 3491325 (1970-01-01), Hu
patent: 3629782 (1971-12-01), Sahni

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