Semiconductor device requiring fewer masking steps to manufactur

Details Semiconductor device requiring fewer masking steps to manufactur Semiconductor device requiring fewer masking steps to manufactur

1997-02-03

1998-09-29

Whitehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 79, 257 80, 257 81, 257 82, 257 83, 257 86, H01L 2715, H01L 3112

Patent

active

058148361

ABSTRACT:
A semiconductor device requiring fewer masking steps to manufacture. The semiconductor device includes the following layers (from bottom up): (1) a substrate; (2) a gate electrode formed on a first portion of the substrate; (3) a first semiconductor layer overlying the gate electrode and a second portion of the substrate adjacent the first portion; (4) first and second spaced doped semiconductor layers provided on a surface of the first semiconductor layer and defining an exposed portion of the first semiconductor layer; (5) first and second insulating layer respectively provided on the first and second spaced doped semiconductor layers adjacent a periphery of the exposed portion of the first semiconductor layer; (6) a first electrode overlying and in contact with the doped semiconductor layer and the first insulating layer; and (7) a second electrode overlying and in contact with the second doped semiconductor layer and the second insulating layer. This structure allows the number of etching steps to be reduced.

REFERENCES:
patent: 5512778 (1996-04-01), Chung et al.

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