Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system
Reexamination Certificate
2006-02-07
2006-02-07
Gagliardi, Albert (Department: 2884)
Radiant energy
Invisible radiant energy responsive electric signalling
Semiconductor system
C250S370090, C250S370140, C250S370110, C257S443000, C257S291000, C257S431000
Reexamination Certificate
active
06995373
ABSTRACT:
By forming a redundant circuit of an extra wiring accompanied with no decrease in an aperture ratio for a photoelectric conversion element, the yield is prevented from being reduced due to wire breaking during a panel manufacturing process.A gate line Vg4and a Vg redundant wiring are electrically insulated and are arranged so as to form a crossing G of the upper and lower lines. Since a Vg redundant wiring Y is formed concurrently with a Sig line, there is no need for additional manufacturing steps to form the Vg redundant wiring Y. If a breaking occurs in the gate line Vg4, the gate line Vg4and the Vg redundant wiring Y are electrically connected to each other by irradiating the crossing G with a laser. Therefore, a gate drive pulse is also applied to a thin film transistor on the broken line through the Vg redundant wiring Y. Thus, any lowering in yield due to a breaking of the gate line Vg4can be prevented without any decrease in the aperture ratio for the photoelectric conversion element.
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Ishii Takamasa
Mochizuki Chiori
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Gagliardi Albert
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