Semiconductor device providing a contact structure which can be

Details Semiconductor device providing a contact structure which can be Semiconductor device providing a contact structure which can be

1983-07-14

1985-10-22

Edlow, Martin H.

357 59, 357 20, 357 71, H01L 2348, H01L 2904, H01L 2906

Patent

active

045491992

ABSTRACT:
A semiconductor device comprises a connection structure composed of a first conductive layer formed in or on a semiconductor substrate, a second conductive layer arranged adjacent to the first conductive layer, and a third conductive layer connecting the first conductive layer to the second conductive layer. The device of the present invention provides a contact structure which can be miniaturized.

REFERENCES:
patent: 4084108 (1978-04-01), Fujimoto
patent: 4376983 (1983-03-01), Tsaur et al.
IEEE Journal of SSC, "A 30 NS 16K.times.1 Fully Static RAM", by Kang et al., vol. SC-16, No. 5, Oct. 1981, pp. 444-448.

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