Semiconductor device provided with trench element isolation film

Details Semiconductor device provided with trench element isolation film Semiconductor device provided with trench element isolation film

1995-01-19

1997-04-29

Wilczewski, Mary

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438296, 438981, H01L 2176, H01L 21762

Patent

active

056248660

ABSTRACT:
A semiconductor device with a trench element isolation structure having a trench element isolation film formed to have a small width at the boundary between an active region and a field region, thereby capable of obtaining an improved element isolation function while easily planarizing an insulating film formed in the trench. A thick oxide film is formed at the field region provided with no trench, thereby preventing formation of a parasitic capacitor between the semiconductor substrate and the gate electrode.

REFERENCES:
patent: 4578128 (1986-03-01), Mundt et al.
patent: 4597164 (1986-07-01), Havemann
patent: 4912062 (1990-03-01), Verma
patent: 5137837 (1992-08-01), Chang et al.
patent: 5177028 (1993-01-01), Manning

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