Electricity: electrical systems and devices – Safety and protection of systems and devices – Circuit interruption by thermal sensing
Reexamination Certificate
2007-12-18
2007-12-18
Sherry, Michael (Department: 2836)
Electricity: electrical systems and devices
Safety and protection of systems and devices
Circuit interruption by thermal sensing
Reexamination Certificate
active
10948693
ABSTRACT:
A overheat protection circuit is formed on the same semiconductor substrate as a power MOS FET is formed on. As the configuration, a first resistor is connected between an input terminal and a gate of the power MOS FET, a second resistor, a temperature sensing element, and a third resistor are connected in this order between the input terminal and a ground point, an FET for clamp is connected in parallel to a series circuit of the temperature sensing element and the third resistor, a series circuit of an FET for current adjustment and a fourth resistor is connected in parallel to the MOS FET for clamp, a series circuit of a fifth and sixth resistors is connected between the input terminal and the ground point, a node of the fifth and sixth resistors is connected to a gate of the FET for current adjustment, an FET for switching is connected between the gate of the power MOS FET and the ground point, and a node of the temperature sensing element and the third resistor is connected to a gate of the FET for switching.
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otes
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Chinese Office Action dated Oct. 13, 2006 with English translation.
Korean Office Action dated Apr. 25, 2006 with English translation.
Clark Christopher J
Sherry Michael
Stevens Davis Miller & Mosher LLP
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