Semiconductor device provided with NAND strings and select...

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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C257S775000, C365S185230

Reexamination Certificate

active

11190005

ABSTRACT:
A non-volatile semiconductor memory device includes a plurality of bit lines, a bit line contact corresponding to the bit lines, a first NAND string and a second NAND string, a first string selective transistor and a second string selective transistor, and a third string selective transistor and a fourth string selective transistor. The first and third string selective transistors are connected to each other, whereas the second and fourth string selective transistors are connected to each other. Each of the first and fourth string selective transistors has a first gate length and each of the second and third string selective transistors has a second gate length differing from the first gate length.

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patent: 5528537 (1996-06-01), Lee et al.
patent: 5698879 (1997-12-01), Aritome et al.
patent: 5943262 (1999-08-01), Choi
patent: 6028788 (2000-02-01), Choi et al.
patent: 6151249 (2000-11-01), Shirota et al.
patent: 6703670 (2004-03-01), Lines
patent: 2002/0195668 (2002-12-01), Endoh et al.
patent: 6-275800 (1994-09-01), None
patent: 6-325581 (1994-11-01), None

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