Semiconductor device provided having a programmable element with

Details Semiconductor device provided having a programmable element with Semiconductor device provided having a programmable element with

1995-01-25

1996-03-26

Ngo/, Nga/ n V.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257209, 257476, 257910, H01L 2900, H01L 27095, H01L 2710

Patent

active

055023266

ABSTRACT:
A semiconductor device includes a programmable element having a doped semiconductor region (4) and a conductor region (6) which are separated from one another by at least a portion of an insulating layer (5). The conductor region (6) is of a material suitable for forming a rectifying junction (8) with the material of the semiconductor region (4). To achieve a comparatively high conductivity connection to the semiconductor region (4), the element is further provided with a contact region (3) which has a comparatively low electrical resistance compared with the semiconductor region (4). The contact region (3) is provided at a side of the semiconductor region (4) remote from the insulating layer (5) and is separated from the insulating layer (5) by the semiconductor region (4). Both the semiconductor region (4) and the contact region (5) are laterally bounded by an isolating region (7) at opposing sides. The invention thus offers a device provided with a programmable element of a substantially more compact structure than a comparable conventional programmable element.

REFERENCES:
patent: 4692787 (1987-09-01), Possley et al.
patent: 4881114 (1989-11-01), Mohsen et al.
patent: 4914055 (1990-04-01), Gordon et al.
patent: 4933735 (1990-06-01), Potash et al.
patent: 5126290 (1992-06-01), Lowrey et al.
patent: 5298784 (1994-03-01), Gambino

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