Semiconductor device provided by silicon carbide substrate...

Details Semiconductor device provided by silicon carbide substrate... Semiconductor device provided by silicon carbide substrate...

2006-12-26

2006-12-26

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

C257S135000

Reexamination Certificate

active

07154130

ABSTRACT:
A semiconductor device includes a first field effect transistor including a source and a gate and disposed in a silicon carbide substrate; and a second field effect transistor including a drain and a gate and disposed in the substrate. The drain of the second field effect transistor connects to the source of the first field effect transistor. The gate of the second field effect transistor connects to the gate of the first field effect transistor.

REFERENCES:
patent: 5396085 (1995-03-01), Baliga
patent: 6576929 (2003-06-01), Kumar et al.
patent: 2002/0034852 (2002-03-01), Alok
patent: 2002/0070409 (2002-06-01), Yonemaru
patent: 2004/0070047 (2004-04-01), Majumdar et al.
patent: A-2002-231820 (2002-08-01), None

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