Semiconductor device, production method for the same, and...

Details Semiconductor device, production method for the same, and... Semiconductor device, production method for the same, and...

2011-03-08

2011-03-08

Chu, Chris (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Ball or nail head type contact, lead, or bond

C257SE23023, C257S778000, C257S779000, C257S780000, C438S108000, C438S614000

Reexamination Certificate

active

07902681

ABSTRACT:
A semiconductor device is provided in which a semiconductor chip is bonded to a substrate with a sufficiently increased bonding strength and cracking is assuredly prevented which may otherwise occur due to heat shock, heat cycle and the like. The semiconductor device includes a semiconductor chip and a substrate having a bonding area to which the semiconductor chip is bonded via a metal layer. The metal layer includes an Au—Sn—Ni alloy layer and a solder layer provided on the Au—Sn—Ni alloy layer. Undulations are formed in an interface between the Au—Sn—Ni alloy layer and the solder layer.

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