Semiconductor device producing method requiring only two masks f

Details Semiconductor device producing method requiring only two masks f Semiconductor device producing method requiring only two masks f

1993-08-09

1994-11-08

Thomas, Tom

Fishing, trapping, and vermin destroying

437 46, 437 56, 437968, 148DIG117, H01L 2176

Patent

active

053626702

ABSTRACT:
Element isolation regions are first formed on a silicon substrate. Active regions other than the isolation regions are formed with an oxide film. Then, a first oxidization prevention layer, a semiconductor layer and a second oxidization prevention layer are formed on the substrate in that order. A resist pattern having a hole in a P-channel MOS transistor formation region is formed. The second oxidization prevention layer in the P-channel MOS transistor formation region is removed and an impurity is ion-implanted using the resist pattern as a mask. After removing the resist pattern, the substrate is thermally treated in the presence of an oxidizer substance to transform an exposed portion of the semiconductor layer into an oxidized semiconductor layer and at the same time to diffuse the implanted impurity in the substrate to thereby form an N-well. After removing the remaining second oxidization prevention layer and the semiconductor layer located under the remaining second oxidization prevention layer, an impurity is ion-implanted into the substrate using the oxidized semiconductor layer as a mask, to thereby form a P-well in a N-channel MOS transistor formation region of the substrate. Then the P-channel and N-channel MOS transistors are formed in respective regions.

REFERENCES:
patent: 4435896 (1984-03-01), Parrillo et al.
patent: 4803179 (1989-02-01), Neppl et al.
patent: 4906595 (1990-03-01), Van der Plas et al.
patent: 5141882 (1992-08-01), Komori et al.
patent: 5166087 (1992-11-01), Kakimoto et al.
patent: 5225365 (1993-07-01), Cosentino
IEEE, 1991, pp. 637-640; Kanaba et al; "A 7 Mask CMOS Technology Utilitizing Liquid Phase Selective Oxide Deposition".
IEEE, 1980, pp. 752-755; Parrillo et al; "Twin-Tub CMOS--A Technology for VLSI Circuits".

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