Semiconductor device produced by a single furnace cycle diffusio

Details Semiconductor device produced by a single furnace cycle diffusio Semiconductor device produced by a single furnace cycle diffusio

1997-08-06

1998-07-28

Tsai, Jey

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant concentration or concentration profile

438542, 438560, 438563, H01L 21225

Patent

active

057866058

ABSTRACT:
A semiconductor deposition and oxidation process using a single furnace cycle. The temperature and gas mixture is stabilized inside the furnace prior to introduction of a dopant at a relatively low temperature. The temperature of the chamber is then ramped-up and the dopant is diffused into the wafer in an inert ambient. The temperature is then ramped-up again and oxygen is introduced to produce an oxide layer. The wafers are then removed from the furnace and any residue of the dopant within the chamber is effectively neutralized by introducing a high flow of oxygen.

REFERENCES:
patent: 3507716 (1970-04-01), Nishida et al.
patent: 3676231 (1972-07-01), Medvecky et al.
patent: 3808060 (1974-04-01), Hays et al.
patent: 3932239 (1976-01-01), Brown
patent: 4054899 (1977-10-01), Stehlin et al.
patent: 4588454 (1986-05-01), Khadder et al.
patent: 4619036 (1986-10-01), Havemann et al.
patent: 5244831 (1993-09-01), Hindman et al.
patent: 5494852 (1996-02-01), Gwin
Wolf Silicon Processing for the VLSI Gra vol. 1-Process Technology pp. 242-248, and 264-266, Lattace Press 1986.
Semiconductor Technology Handbook, Trapp et al., 5th ed., 1985, Technology Assoc., Portola VAlley, CA, Bofors Inc., San Mateo, CA, DIF 1--pp. 6.1-6.31.

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