Semiconductor device process using diffusant penetration and sou

Details Semiconductor device process using diffusant penetration and sou Semiconductor device process using diffusant penetration and sou

1991-01-11

1992-08-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 46, 437950, 148DIG35, 148DIG34, H01L 21225

Patent

active

051418959

ABSTRACT:
A semiconductor device is formed by a process in which a diffusant penetration layer and a diffusant source layer containing a boron dopant are formed overlaying the surface of a semiconductor substrate. The diffusant source layer is annealed to cause the boron dopant to controllably diffuse through the diffusant penetration layer to the semiconductor substrate to form a doped region at the surface. The diffusant source layer and the diffusant penetration layer are removed and a gate insulator is formed on the substrate surface overlaying the doped region. An N doped gate electrode is then formed overlaying the gate insulator.

REFERENCES:
patent: 4676847 (1987-06-01), Lin
patent: 4996168 (1991-02-01), Ozaki et al.

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