Semiconductor device, process for the production thereof and app

Details Semiconductor device, process for the production thereof and app Semiconductor device, process for the production thereof and app

1992-03-26

1994-09-13

Paschall, Mark H.

Electric heating

Metal heating

By arc

21912144, 437228, 437235, 437245, 20429835, 156646, B23K 900, B44C 122

Patent

active

053471008

ABSTRACT:
Disclosed are a semiconductor device comprising a semiconductor substrate, a first metal connection layers, a first substrate oxide layer having a specific form, and a second connection pattern layer; a process for producing the device; and a microwave plasma treatment apparatus having gas feed ports in a specific position. The highly reliable semiconductor devices can be produced at a high rate at high yields.

REFERENCES:
patent: 4859618 (1989-08-01), Shikata et al.
patent: 5069747 (1991-12-01), Cathey et al.
patent: 5126290 (1992-06-01), Lowrey et al.
patent: 5173448 (1992-12-01), Yanagi
patent: 5229325 (1993-07-01), Park et al.
K. Machida, et al., "SiO.sub.2 Planarization Technology with Biasing and Electron Cyclotron Resonance Plasma Deposition for Submicron Interconnections", J. Vac. Sci. Technol. B4(4), Jul./Aug. 1986, pp. 818-821.

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