Semiconductor device plastic jacket having first and second annu

Electricity: conductors and insulators – Feedthrough or bushing – Compression

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 74, 357 81, 174 52S, 174 52H, H01L 2342, H01L 2344, H01L 2346

Patent

active

042400996

ABSTRACT:
A high performance, wafer-shaped semiconductor device of the type including a wafer-shaped semiconductor element, a pair of electrodes located on the surfaces of the element, a pair of cylindrical metal bodies contacting the electrodes, an insulating ring enclosing and centering the metal bodies and the semiconductor element and a plastic jacket surrounding the insulating ring for tightly encasing the semiconductor device. In addition, there is provided a pair of annular sheet metal strips each of which has an inner edge region fastened to one of the cylindrical metal bodies and a corrugated chemically roughened outer edge region which is embedded in the plastic jacket. A powder coating is applied to the chemically roughened outer edge region for the purpose of providing a pressure and oil-tight housing for the semiconductor device.

REFERENCES:
patent: 3437887 (1969-04-01), Nowalk et al.
patent: 3443168 (1969-05-01), Camp
patent: 3559001 (1971-01-01), Cooper et al.
patent: 3721867 (1973-03-01), Schierz
patent: 3831067 (1974-08-01), Wislocky et al.
patent: 3986201 (1976-10-01), Herold et al.
patent: 4008486 (1977-02-01), Byczkowski

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device plastic jacket having first and second annu does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device plastic jacket having first and second annu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device plastic jacket having first and second annu will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-611223

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.