Semiconductor device package having a low profile structure and

Details Semiconductor device package having a low profile structure and Semiconductor device package having a low profile structure and

1993-02-23

1994-04-12

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

257710, 257701, H01L 2302, H01L 2312

Patent

active

053028520

ABSTRACT:
A semiconductor device includes a semiconductor element, a base, a cap, leads, and low-melting glass. The semiconductor element is mounted on the base, and the base consists of high-purity alumina and has a thickness of 0.5 mm or less. The cap is arranged on the base to cover the semiconductor element, consists of translucent alumina, and has a thickness of 0.4 mm or less. The leads extend out of the semiconductor device to be interposed between the base and the cap, and are electrically connected to the semiconductor element. The low-melting glass integrally and hermetically seals the base, the leads, and the cap.

REFERENCES:
patent: 5063435 (1991-11-01), Okamoto et al.
patent: 5159432 (1992-10-01), Ohkubo et al.

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