Semiconductor device output buffer circuit for LSI

Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Signal transmission integrity or spurious noise override

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327589, 326 88, 307 35, 307110, 36518909, 365226, H03K 1716

Patent

active

060723548

ABSTRACT:
In a semiconductor device having a plurality of output circuits such as a semiconductor memory device, a drive signal having a boosted voltage level which is produced from a boosting circuit is applied to a gate of a low-level outputting MOS transistor in the output circuit. As a result, even when a potential at the ground wiring line is floated, a substantial decrease of a potential difference between the ground wiring line and the gate of the low-level outputting MOS transistor can be prevented. Also, a signal having a sufficiently high level can be supplied to a gate of a low-level outputting output MOS transistor. As a consequence, delays in the switching operation of the output MOS transistor can be suppressed, and the output circuit can be operated at high speed.

REFERENCES:
patent: 4583203 (1986-04-01), Monk
patent: 5563080 (1996-10-01), Ahn
patent: 5594380 (1997-01-01), Nam
patent: 5621342 (1997-04-01), Wong et al.

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