Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2002-05-29
2003-10-14
Tran, Thien (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S777000, C257S778000
Reexamination Certificate
active
06633081
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a chip size semiconductor device that can be mounted densely on a packaging substrate with high mounting efficiency and high reliability, and a method for manufacturing the same. In particular, the present invention relates to a semiconductor device that can be manufactured at a semiconductor wafer level and has a highly reliable structure, and a method for manufacturing the same.
2. Description of Related Art
Accompanying the reduction in size and weight and the densification of portable appliances in recent years, there has been an increasingly denser mounting of semiconductor packages having a lead terminal as an external electrode. In order to mount such semiconductor packages on a packaging substrate more densely, a technology of mounting a chip size semiconductor package on a packaging substrate has been developed.
The following is a description of a conventional semiconductor device, with reference to accompanying drawings.
FIG. 3A
is a perspective view showing a conventional semiconductor device
90
.
FIG. 3B
is a sectional view thereof taken along the line A—A shown in FIG.
3
A.
The semiconductor device
90
includes a substantially rectangular parallelepiped semiconductor chip
93
. On the periphery of a principal surface of the semiconductor chip
93
, a plurality of electrode pads
92
are provided. Each of the electrode pads
92
is connected to a semiconductor integrated circuit element (not shown) formed inside the semiconductor chip
93
. On the principal surface of the semiconductor chip
93
, an insulating layer
81
is formed in such a manner as to be surrounded by the plurality of electrode pads
92
. The insulating layer
81
is formed of a low-elasticity resin having an insulating property. On the insulating layer
81
, a plurality of contact pads
83
are formed in a matrix form. Each of the contact pads
83
is connected to one of the plurality of electrode pads
92
via a fine wiring layer
98
, which is formed of a metal conductor. An insulating resin layer
82
with a plurality of openings respectively reaching the contact pads
83
also is formed on the insulating layer
81
. In the perspective view of
FIG. 3A
, a part of the insulating resin layer
82
is omitted for the purpose of illustrating the electrode pads
92
, the insulating layer
81
, the wiring layers
98
and the contact pads
83
that are formed under the insulating resin layer
82
. In each of the openings provided in the insulating resin layer
82
, a substantially spheroidal solder ball
97
is placed so as to be connected to the contact pad
83
. Each of the solder balls
97
forms a protruding electrode.
As described above, the plurality of electrode pads
92
provided on the periphery of the principal surface of the semiconductor chip
93
are rewired via the fine wiring layers
98
and the contact pads
83
to the solder balls
97
, which are arranged two-dimensionally on the principal surface of the semiconductor chip
93
.
A method for manufacturing the conventional semiconductor device
90
with the above structure will be described with reference to
FIGS. 4A
to
4
G.
FIGS. 4A
to
4
G are sectional views for describing the method for manufacturing the conventional semiconductor device
90
.
First, as shown in
FIG. 4A
, a semiconductor wafer
91
in which a plurality of the substantially rectangular parallelepiped semiconductor chips
93
are formed is prepared. The plurality of electrode pads
92
are arranged on the periphery of the principal surface of each of the semiconductor chips
93
formed in the semiconductor wafer
91
. Each of the electrode pads
92
is connected to the semiconductor integrated circuit element (not shown) formed inside the semiconductor chip
93
.
Next, as shown in
FIG. 4B
, on the principal surface of each of the semiconductor chips
93
formed in the semiconductor wafer
91
, the insulating layer
81
is formed in such a manner as to be surrounded by the plurality of electrode pads
92
. The insulating layer
81
is formed of a low-elasticity resin having an insulating property.
Then, as shown in
FIG. 4C
, on the insulating layer
81
formed on the principal surface of each of the semiconductor chips
93
formed in the semiconductor wafer
91
, a plurality of the contact pads
83
are formed in a matrix form. The fine wiring layer
98
for connecting each of the contact pads
83
to one of the plurality of electrode pads
92
is formed with a metal conductor.
Thereafter, as shown in
FIG. 4D
, the insulating resin layer
82
with a plurality of the openings respectively reaching the contact pads
83
is formed on the insulating layer
81
formed on the principal surface of the semiconductor chip
93
.
Subsequently, as shown in
FIG. 4E
, in each of the openings provided in the insulating resin layer
82
, the substantially spheroidal solder ball
97
is placed so as to be connected to the contact pad
83
. Each of the solder balls
97
forms the protruding electrode.
Then, as shown in
FIG. 4F
, the semiconductor wafer
91
and the insulating resin layer
82
are cut with a rotating blade
23
from above the semiconductor wafer
91
along a dicing scribe line
84
set between the plurality of semiconductor chips
93
formed in the semiconductor wafer
91
, thus obtaining a semiconductor device as shown in FIG.
4
G. The semiconductor device that has been separated from the semiconductor wafer
91
and is shown in
FIG. 4G
has the same structure as the semiconductor device
90
described above referring to
FIGS. 3A and 3B
. According to the above-described processes, a high-density chip-type semiconductor device suitable for being mounted on a substrate can be manufactured.
However, in the conventional semiconductor device
90
described above, since the fine wiring layers
98
for connecting the electrode pads
92
provided on the principal surface of the semiconductor chip
93
and the solder balls
97
serving as the protruding electrodes provided on the insulating layer
81
formed on the principal surface of the semiconductor chip
93
extend over a slope-like step between the insulating layer
81
and the principal surface of the semiconductor chip
93
, the wiring layers
98
may break at this slope-like step. Accordingly, there is a problem of poor reliability of the structure for connecting the electrode pads provided on the periphery of the principal surface of the semiconductor chip and the protruding electrodes provided substantially at the center of the principal surface of the semiconductor chip.
SUMMARY OF THE INVENTION
It is an object of the present invention to solve the problem described above and to provide a semiconductor device having a highly reliable structure, and a method for manufacturing the same.
It is a further object of the present invention to provide a semiconductor device, in which a structure for connecting electrode pads and protruding electrodes provided on a principal surface of a semiconductor chip has an improved reliability, and a method for manufacturing the same.
A semiconductor device according to the present invention is a semiconductor device to be mounted on a packaging substrate. The semiconductor device includes a first semiconductor chip, a plurality of first electrode pads provided on a surface of the first semiconductor chip on a side of the packaging substrate, for electrically connecting the first semiconductor chip to the packaging substrate, a second semiconductor chip mounted on the first semiconductor chip so as to be surrounded by the plurality of first electrode pads, and protruding electrodes respectively provided so as to protrude from the first electrode pads toward the packaging substrate so that their surfaces are substantially flush with a surface of the second semiconductor chip on a side of the packaging substrate.
Accordingly, the protruding electrodes for electrically connecting the first semiconductor chip to the packaging substrate respectively are provided so as to protrude
Sahara Ryuiti
Simoishizaka Nozomi
Matsushita Electric - Industrial Co., Ltd.
Merchant & Gould P.C.
Tran Thien
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