Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-03-14
1998-07-07
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257772, 257762, H01L 2348, H01L 2352, H01L 2940
Patent
active
057773882
ABSTRACT:
The invention relates to a semiconductor device of the type sealed in glass, comprising a semiconductor body having a pn-junction between opposing faces which are connected to slugs of a transition metal, said slugs being connected to copper-containing connection conductors by a bonding layer, the bonding layer comprising, in addition to copper and silver, more than 1 wt. % germanium.
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Patent Abstracts of Japan, vol. 4, No. 71, JP,A,55-39617 "Manufacturing of Glass Mold Type Diode", Mar. 19, 1980.
Cao Phat X.
Crane Sara W.
U.S. Philips Corporation
Wieghaus Brian J.
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