Semiconductor device of SiC with insulating layer and a refracto

Details Semiconductor device of SiC with insulating layer and a refracto Semiconductor device of SiC with insulating layer and a refracto

1997-11-18

2000-02-15

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257289, 257410, 257411, 257751, 257764, 257770, H01L 310312, H01L 29772, H01L 2348, H01L 2951

Patent

active

060256087

ABSTRACT:
A semiconductor device comprises at least one semiconductor layer of SiC and a layer of a refractory metal nitride separated by an insulating layer located next to the SiC layer of SiO.sub.2. The insulating layer comprises two sub layers, namely a first sub layer of SiO.sub.2 next to the SiC layer and a second sub layer of Si.sub.3 N.sub.4 located between the first sub layer and the metal nitride layer.

REFERENCES:
patent: 4935804 (1990-06-01), Ito et al.
patent: 5124779 (1992-06-01), Furukawa
patent: 5216264 (1993-06-01), Fujii
patent: 5597744 (1997-01-01), Kamiyama et al.
patent: 5742076 (1998-04-01), Sridevan

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