Semiconductor device of MOS structure having p-type gate electro

Details Semiconductor device of MOS structure having p-type gate electro Semiconductor device of MOS structure having p-type gate electro

1992-01-30

1993-02-23

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

257756, 257914, H01L 2904, H01L 29167, H01L 29207, H01L 29227

Patent

active

051895048

ABSTRACT:
A semiconductor device of a MOS structure having a p-type gate electrode has a gate electrode including at least two layers consisting of a boron-doped polysilicon layer and a polysilicon layer doped with boron and an inert material. This inert material is nitrogen or carbon.

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